Ballistic Transport in State-of-the Art In0.65Ga0.35As/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors at Room and Cryogenic Temperatures

Seung-Woo Son,In-Geun Lee, Min-Seo Yu, Su-Min Choi,Yong-Soo Jeon, Sang-Pyeong Son, Ji-Hoon Yoo, Sang-Ki Yun, Tae-Woo Kim, Jae-Hak Lee,Kyounghoon Yang,Dae-Hyun Kim

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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Key words

Cryogenic Temperatures,High Electron Mobility Transistors,Ballistic Transport,Carrier Transport,Channel Layer,Role Of Mobility,Gate Length,Isothermal,Technological Devices,Effective Mobility,Gate Capacitance

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