Precise Alignment in Ultra-Thin (< 1 Μm) Interlayer Wafer-Level Active Device Transfer with SOI Temporary Bonding
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
Ultrathin Interlayer,Young’s Modulus,Thermal Management,Wet Etching,Crystallinity,Raman Spectroscopy,Device Performance,Active Layer,Complete Removal,Highest Temperature,Silicon Wafer,Vertical Integration,Adhesive Layer,Silicon Surface,Silicon-on-insulator,Μm Thick Layer,Curves Of Devices,Tetramethylammonium Hydroxide,Si Layer,Glass Wafer,3D Integration,Thermal Budget,Subsequent Etching
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