First Photon-Trapping InGaAs Avalanche Photodiode and Its Integration on the SOI Platform
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
Avalanche Photodiode,SOI Platform,Dark Current,Broad Window,Multiplicative Gain,Unit Gain,Light Absorption,Device Design,Electron Beam Lithography,Absorption Enhancement,Optical Performance,Molecular Beam Epitaxy,Epitaxial Layer,Truncated Cone,Peak Field,Etching Depth,Enhanced Light Absorption,E-field Distribution
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