VT Window Model of the Single-Chalcogenide Xpoint Memory (SXM)
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
Key words
High Field,Physical Mechanisms,High Electric Field,TCAD Simulation,Band Gap,Density Functional Theory,Valence Band,Local State,Excess Electrons,Negative Differential Resistance,Pulse Program,Anode Side,Properties Of Glasses,Schottky Barrier Height,Memory Window,Effective Bandgap,Segregation Model
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