Correlation of TMD Defects with Device Performance in Ultra-Scaled Channels: Theoretical Insights and Experimental Observations

Lida Ansari,Andrey Vyatskikh,Chelsey Dorow, Saurabh Kharwar,Sharieh Jamalzadeh Kheirabadi,Paul K. Hurley, Luca Camilli, Manuela Scarselli, Matthew Shaw, Lutfe Siddiqui,Ashish Penumatcha, Kevin O'Brien,Carly Rogan,Scott B. Clendenning, Jessica Torres,Uygar Avci,Farzan Gity

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Device Performance,Transition Metal Dichalcogenides,Grain Boundaries,Channel Length,Monolayer MoS2,2D Transition Metal Dichalcogenides,Transition Metal Dichalcogenides Materials,Defective Channel,Density Functional Theory,Density Of States,Carrier Mobility,Presence Of Defects,Field-effect Transistors,Generalized Gradient Approximation,Symmetric Structure,Nanoelectronics,OFF State,Band Bending,Curves Of Devices,Gate Length,Non-equilibrium Green’s Function,Fault Position,Impact Of Defects,Upward Bending

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