An Experimentally Validated TCAD Variability Study of the Relative Performance of In-Ga-Zn-O and Poly-Si-Channel Ferroelectric VNANDs

M. Thesberg, Z. Stanojević,F. Schanovsky, J.M. Gonzalez-Medina,G. Rzepa,F. Mitterbauer,O. Baumgartner, M. Karner

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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Key words

Crystallite,polySia,Thin Films For Applications,Grain Size,Correlation Function,Work Function,Average Grain,Average Grain Size,Schottky Barrier,Gaussian Random Field,Law Exponent,Oxide Interface,Channel Thickness,Memory Window

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