CMOS Compatible 200 Mm GaN-on-Si HEMTs for RF Switch Applications with 36 Dbm CW Power Handling and 200 FS RonCoff

L. Lucci,I. Charlet,Y. Gobil, F. Morisot,J. Delprato,S. Ruel, C. Benotmane,F. Laulagnet, P. Dezest, R. Bon, T. Bordignon,A. Clemente, A. Kumar,A. Anotta,T. Billon,B. Duriez,E. Morvan

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

High Electron Mobility Transistors,Power Handling,RF Switch,Epitaxial,Transmission Line,Contact Resistance,Figure Of Merit,Sheet Resistance,OFF State,Gate Bias,Van Der Pauw,Compression Point

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