First Demonstration of AFeFET-Based Capacitor-Less Edram Computing-in-Memory Featuring 4.84 Mb/mm2 High Memory Density, 105 S Long Retention Time, and >1010 High Endurance

Hongtao Zhong,Zijie Zheng,Leming Jiao,Zuopu Zhou,Chen Sun,Wenjun Tang,Zhonghao Chen,Yuye Kang,Kaizhen Han,Vijaykrishnan Narayanan,Huazhong Yang,Thomas Kämpfe,Kai Ni,Xiao Gong,Xueqing Li

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

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关键词

Chromatography,Density Data,High Endurance,High Memory Density,Hysteresis,Cluster Assignment,Channel Length,Computing Units,Longer Retention,Longer Retention Time,Memory Cells,Large Capacity

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