High-Performance Monolayer-2D Stacked Nanosheet FETs with High ION~ 451 Μa/μm and ION/IOFF > 109
2024 IEEE International Electron Devices Meeting (IEDM)（2024）
关键词
Nanosheet FETs,Monolayer MoS2,Moore’s Law,Planar Devices,Law Scaling,Transmission Electron Microscopy Images,Device Performance,2D Materials,Process Flow,Modulation Of Processes,Transition Metal Dichalcogenides,Residual Carbon,2D Monolayer,Plasma Cleaner,Metal Organic Chemical Vapor Deposition,Sacrificial Layer,Channel Material,Top Gate,Bottom Gate
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