Advanced Multi-Vt Enabled by Selective Layer Reductions for 2nm Nanosheet Technology and Beyond

R. Bao, Y. Oniki, X. He, Y. Isobe, P. Hundekar, S. Matsuyama,S. Mignot, S. Kawamoto, A. V. Ramirez, H. Abe, A. Chou, T. Hamada, W. Parkin,M. Sankarapandian,P. Jamison,A. Reznicek, S. Sudhindra, Y. Murakami, T. McDonough, S. Kumar, W. Zhao, H. Zhou, J. Li, G. Bajpai,E. Miller,I. Seshadri, L. Qin, C. Adams, M. Wang, Y. Zhu,B. Peethala,D. K. Sohn, M. Lagus, K. Zhao, R. Mo,E. Leobandung, K. Tomida,D. Guo, Y. Fukuzaki,H. Bu

2024 IEEE International Electron Devices Meeting (IEDM)（2024）

引用 0|浏览1

关键词

Nanosheet Technology,Thin Layer,Etching Process,Metal Work Function,High Performance,Boundary Region,High Technology,Gate Dielectric,Metal Gate,Extreme Ultraviolet,Open Side,Gate Stack,Metal Stack

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要