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Theoretical Insights into the Interface Engineering of /3-Ga 2 O 3 Devices with Ferroelectric HfO2 Gate Dielectric: Impact of Polarization Direction

Jinhao Su,Zhaofu Zhang,Qingzhong Gui,Wei Yu,Xuhao Wan,Anyang Wang,Zeyuan Li,Ruyue Cao,John Robertson,Sheng Liu,Yuzheng Guo

SURFACES AND INTERFACES（2025）

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Key words
/3-Ga 2 O 3 devices,Ferroelectric HfO 2,Polarization direction,Interface structure,First-principles calculations
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