Multibit N-Type and P-Type Fe-GAAFETs Using HfO2/ZrO2 Superlattice Dielectric and SiGe/Si Superlattice Channel with Record Low Voltage, Large Memory Window, High Speed, and Reliability for High Density 1T NVM Applications
IEEE Transactions on Electron Devices（2025）
关键词
Ferroelectric field-effect transistor (FeFET),ferroelectric memory,gate-all around field-effect transistor (GAAFET),hafnium oxide,multibit,nonvolatile memory (NVM),SiGe,superlattice (SL),zirconium oxide
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