Physical Model for SiC Power Device Heavy-Ion Burnout Based on Pre-Strike Depletion Capacitance Energy Storage

Steven L. Kosier, Arijit Sengupta,Dennis R. Ball, John M. Hutson,Andrew L. Sternberg,Sajal Islam,Arthur F. Witulski,Ronald D. Schrimpf,Kenneth F. Galloway,Michael L. Alles,Jason M. Osheroff

IEEE Transactions on Nuclear Science（2025）

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关键词

Power MOSFETs,Schottky diodes,silicon carbide,single-event effects,vertical metal–oxide–semiconductor field-effect transistor (MOSFET),Single Event Burnout (SEB)

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