Controllable P-Type Doping Strategy for High-Performance 2D Material Complementary Inverters.

Hao Wu, Jiawei Xue, Zheng Wu,Juqing Liu,Yingchun Cheng,ZhenDa Xie,Zhong Yan

ACS applied materials & interfaces（2025）

School of Flexible Electronics | National Laboratory of Solid-State Microstructure

Cited 0|Views6

Abstract

Controllable doping is required to modulate the electrical properties of the semiconductor devices. Such controllability is a particular issue in p-type doping for two-dimensional (2D) semiconductors. Here, we present a controllable doping strategy for modulating carrier density and threshold voltage of WSe2 transistors via surface oxidation at 200 °C in air. The hole density in the WSe2 channel can be precisely modulated from 1 × 1011 cm-2 to 3.5 × 1012 cm-2 by increasing oxidation duration, while its carrier mobility is virtually unaffected, maintaining a high value of 94.3 cm2·V-1·s-1. This controllable doping method can help to achieve balanced carrier transport in the n-type and p-type transistors in CMOS devices. The doped p-type WSe2 transistor in a CMOS inverter resulted in a high gain of 52 and a lower static power of 0.256 nW at a bias voltage of 1 V. Therefore, our findings might pave the way for reliable fabrication of high-performance 2D electronic circuits.

Translated text

求助PDF

上传PDF

Bibtex

AI Read Science

AI Summary

AI Summary is the key point extracted automatically understanding the full text of the paper, including the background, methods, results, conclusions, icons and other key content, so that you can get the outline of the paper at a glance.

Example

Background

Key content

Introduction

Methods

Results

Related work

Fund

Key content

Pretraining has recently greatly promoted the development of natural language processing (NLP)
We show that M6 outperforms the baselines in multimodal downstream tasks, and the large M6 with 10 parameters can reach a better performance
We propose a method called M6 that is able to process information of multiple modalities and perform both single-modal and cross-modal understanding and generation
The model is scaled to large model with 10 billion parameters with sophisticated deployment, and the 10 -parameter M6-large is the largest pretrained model in Chinese
Experimental results show that our proposed M6 outperforms the baseline in a number of downstream tasks concerning both single modality and multiple modalities We will continue the pretraining of extremely large models by increasing data to explore the limit of its performance

Upload PDF to Generate Summary

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Data Disclaimer

The page data are from open Internet sources, cooperative publishers and automatic analysis results through AI technology. We do not make any commitments and guarantees for the validity, accuracy, correctness, reliability, completeness and timeliness of the page data. If you have any questions, please contact us by email: report@aminer.cn

Chat Paper

【要点】：论文提出了一种可控的p型掺杂策略，通过表面氧化调控二维半导体WSe2的载流子密度和阈值电压，实现了高性能的二维材料互补反相器。

【方法】：通过在空气中200°C下对WSe2进行表面氧化处理，精确调节其通道中的空穴密度。

【实验】：通过增加氧化时间，将WSe2通道中的空穴密度从1 × 10^11 cm^-2调控至3.5 × 10^12 cm^-2，同时保持了94.3 cm^2·V^-1·s^-1的高载流子迁移率。实验使用的数据集为WSe2晶体管特性数据，最终实现了CMOS反相器的高增益（52）和低静态功耗（0.256 nW）。