Linear Fine-tuning VFB and Improved Interface Via Novel Al2O3 Atomic In-Situ Dipole Buffer Layer (DBL) in ALD La2O3 Dipole-first Stack
IEEE Electron Device Letters（2025）
关键词
high-k/metal gate (HKMG),Al2O3,La-dipole,fine-tuning,flat-band voltage (VFB) modulation
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