An ANN-Based GaN HEMT Large-Signal Model with High Near-Threshold Accuracy and Its Application in Class-AB MMIC PA Design
IEEE Transactions on Microwave Theory and Techniques（2025）
Key words
Gallium nitride (GaN),high-electron-mobility transistors (HEMTs),large-signal model,monolithic microwave integrated circuit (MMIC),neural network,power amplifier (PA)
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