Using High Dielectric Constant HfO2/ZrO2 Superlattice Dielectrics to Enhance Ge Stacked Nanosheets Gate-All-Around Transistor Performance
IEEE Electron Device Letters（2025）
Key words
HfO2,ZrO2,superlattice,dielectric constant,Ge stacked nanosheets,gate-all-around (GAA)
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined