Analyzing the Contact-Doping Effect in In2O3 FETs: Unveiling the Mechanisms Behind the Threshold-Voltage Roll-Off in Oxide Semiconductor Transistors

Jian-Yu Lin,Chang Niu, Zehao Lin, Sumi Lee, Taehyun Kim, Jungho Lee, Chang Liu, Juanjuan Lu,Haiyan Wang,Muhammad Ashraful Alam, Changwook Jeong,Peide D. Ye

IEEE Transactions on Electron Devices（2025）

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关键词

contact-doping effect (CDE),indium oxide (In 2 O 3 ),oxygen scavenging reaction (OSR),Schottky barrier height,threshold voltage roll-off

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