Defect Dynamics in Silicon-Doped HfO2-Based Front-End-of-Line FeFETs: Insights from Low-Frequency Noise on Doping Concentration, Interfaces, and Write Cycling

Yannick Raffel, Daniel Hessler, Gautham Kumar,Ricardo Olivo,Luca Pirro, Talha Chohan,Konrad Seidel, Raik Hoffmann, Deepanshi Bhatnagar, Apu Das,Maximilian Lederer,Sourav De,Johannes Heitmann

IEEE Transactions on Electron Devices（2025）

引用 0|浏览0

关键词

Doping,flicker noise,hafnium oxide (HfO2),main noise source,scattering factor,zirconium (Zr),silicon (Si)

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要