Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration
2025 IEEE International Reliability Physics Symposium (IRPS)（2025）
关键词
Asymmetric,Negative bias temperature instability (NBTI),Oxide transistor,Positive bias temperature instability (PBTI),Universal scaling,Vertical transistor
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