An Effective Method to Compensate for Testing Induced SBFET Degradation by Charging Deep-level Interface Trap

Tiexin Zhang,Fanyu Liu,Lei Shu, Siyuan Chen, Yuchong Wang, Yuchen Wu,Jing Wan,Yong Xu, Shi Li, Yuyang Ding,Bo Li,Zhengsheng Han,Tianchun Ye

ieee（2025）

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Key words

deep-level interface trap,electric stress annealing effect,Id -Vg,SBFET,Schottky contact,total ionizing dose effect

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