Demonstration of Conformal MoS2 on High-Aspect-Ratio Structures Up to 40:1 and Exploration of Manufacturability in a 300mm Fab for 3D NAND Applications

Hao-Ling Tang, Keith T Wong, Minrui Yu, Jason Appell, Pei Liu, Chunyu Wong, Yi-Hsuan Sharon Hsiao, Hongwen Zhou, Luc Thomas, Lixia Rong,Lavinia Nistor, Ming-Hui Chiu, Xin Meng, Jee-Jay Chen, Dongqing Yang, Gopal Bajaj, Arvind Kumar, Michel Frei,Srinivas D Nemani,Mahendra Pakala,Ellie Yieh

2025 IEEE International Memory Workshop (IMW)（2025）

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Key words

Aspect Ratio,2D Materials,Downstream Processing,Atomic Layer Deposition,Vertical Channel,Key Unit,Nanosheets,Deposition Process,X-ray Fluorescence,Transition Metal Dichalcogenides,Etching Process,Reactive Ion Etching,Transfer Technique,Physical Vapor Deposition,polySia,Cross-sectional Transmission Electron Microscopy,Channel Material,Transistor Channel,MoS2 Film

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