Detailed Comparisons of Program, Erase and Data Retention Characteristics between P+- and N+-Poly SONOS NAND Flash Memory
Taipei（2006）
关键词
data retention,inaccurate long time projection,poly gate,charge loss characteristic,short time status,state-of-the-art flash memory,read delay time,future nonvolatile memory candidate,detailed comparisons,poly sonos nand flash,data retention performance,slower charge decay rate,data retention characteristics,threshold voltage,work function,nonvolatile memory,decay rate
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