A New Device Phenomenon in Cryogenically-Operated SiGe HBTs

Jiahui Yuan,Chendong Zhu,Yan Cui,John D. Cressler,Guofu Niu,Qingqing Liang,Enhai Zhao,Aravind Appaswamy,Ramkumar Krithivasan,Alvin Joseph

International Electron Devices Meeting（2006）

Cited 6|Views39

Key words

Ge-Si alloys,cryogenics,heterojunction bipolar transistors,negative resistance,technology CAD (electronics),2D TCAD simulations,SiGe,heterojunction barrier effect,heterojunction bipolar transistors,negative differential resistance

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