Improved 2-D regional transit time analysis for optimized scaling of SiGe HBTs
Bipolar/BiCMOS Circuits and Technology Meeting（2010）
关键词
ge-si alloys,computational complexity,heterojunction bipolar transistors,hydrodynamics,technology cad (electronics),2d regional transit time analysis,hbt,kirk effect,sige,tcad suite,cutoff frequency,frequency 200 ghz,frequency 375 ghz,frequency 450 ghz,full frequency-domain simulation,heterojunction barrier effect,hydrodynamic device simulation,quasi-static 2d transit time analysis,transit time component,sige hbt,transit time analysis,device scaling,regional transit times,silicon-germanium,current density,frequency domain,space charge,computational modeling
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