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Matching Behavior of Analog Fdsoi N-Mos-Transistors under Large Backgate Voltage Swing Operating Conditions

2013 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S)(2013)

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MOSFET,elemental semiconductors,silicon,silicon-on-insulator,Si,analog FDSOI nMOS-transistor,drain current variation,large backgate biasing variation,large backgate voltage swing operating condition,linear mode threshold voltage,matching behavior,saturation mode threshold voltage
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