VLSI Processed InGaAs on Si MOSFETs with Thermally Stable, Self-Aligned Ni-InGaAs Contacts Achieving: Enhanced Drive Current and Pathway Towards a Unified Contact Module

Rinus T. P. Lee,R. J. W. Hill,W. -Y Loh,R. -H. Baek,S. Deora,K. Matthews,C. Huffman,K. Majumdar,T. Michalak,C. Borst,P. Y. Hung, C. -H. Chen,J. -H. Yum,T. -W. Kim,C. Y. Kang,Wei-E Wang,D-H. Kim,C. Hobbs,P. D. Kirsch

2013 IEEE International Electron Devices Meeting（2013）

引用 12|浏览0

关键词

CMOS integrated circuits,Ge-Si alloys,III-V semiconductors,MOSFET,VLSI,electrical contacts,elemental semiconductors,gallium arsenide,indium compounds,nickel,silicon,thermal stability,BEOL processes,CMOS application,III-V channels,MOSFET,Ni-InGaAs,Si,SiGe,VLSI process,enhanced drive current,nonself aligned contacts,parasitic resistance,temperature 500 C,thermal stability,tool contamination,unified contact module

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