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Single- and Multiple-Event Induced Upsets in ${\rm HfO}_2/{\rm Hf}$ 1T1R RRAM

IEEE Transactions on Nuclear Science(2014)

Cited 35|Views0
Key words
Cross section,heavy ion,Hf,HfO2,multiple event upset,RESET,resistive random access memory (RRAM),SET,single event upset,state change,two photo absorption,TPA
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