Highly Reliable TaOx ReRAM with Centralized Filament for 28-Nm Embedded Application

Y. Hayakawa,A. Himeno,R. Yasuhara,W. Boullart,E. Vecchio,T. Vandeweyer,T. Witters,D. Crotti,M. Jurczak,S. Fujii, S. Ito,Y. Kawashima,Y. Ikeda,A. Kawahara, K. Kawai,Z. Wei,S. Muraoka,K. Shimakawa, T. Mikawa,S. Yoneda

Symposium on VLSI Technology（2015）

Cited 97|Views10

Key words

encapsulated cell structure,cell side oxidation,low-damage etching,process technology,thermal stability,filament positioning,embedded application,centralized filament,ReRAM,size 28 nm,size 40 nm,temperature 85 C,TaOx

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined