Fully Aligned Via Integration for Extendibility of Interconnects to Beyond the 7 Nm Node
2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）
关键词
fully aligned via integration scheme,FAV integration scheme,interconnects extendibility,Cu wires,W wires,via guiding structures,critical dimension errors,via-wire contact area,TDDB reliability,insulator spacing,EM reliability,subsequent level pattern definition,RIE selectivity,dielectric cap layers,wiring levels,local topography,associated barrier liner materials,size 7.0 nm,size 36.0 nm,Cu
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