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Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory

Guohan Hu,Anusz J. Nowak,Atthias G. Gottwald,Jonathan Z. Sun, Dimitri Houssameddine, Junghoon Bak,Stephen L. Brown,Pouya Hashem,Qing He,Juhyun Kim,Chandrasekharan Kothandaraman,Gen Lauer,Hyun Koo Lee, Thitima Suwannasiri,Philip L. Trouilloud,Daniel C. Worledge

IEEE Magnetics Letters（2019）

引用 14|浏览40
关键词
Spin electronics,spin-transfer torque,magnetoresistive random-access memory,write-error rate
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