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High Performance Low Temperature FinFET with DSPER, Gate Last and Self Aligned Contact for 3D Sequential Mtegration

J. Micout,V. Lapras,P. Batude,C. Fenouillet-Beranger,J. Lacord,B. Sklenard,B. Mathieu,Q. Rafhay,V. Mazzocchi,J-P. Colinge,L. Lachal,X. Garros,M. Casse,A. Toffoli,G. Romano,F. Allain,L. Brunet,J. -M. Hartmann, R. Bortolin,F. Mazen,S. Barraud,N. Rambal,C. Tabone,M-P. Samson,P. Besombes,V. Delaye,Z. Saghi,V. Loup,C. Comboroure,V. Balan,L. Desvoivres,C. Vizioz,G. Ghibaudo,M. Vinet

2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)（2017）

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关键词
High performance low temperature FinFET,self aligned contact,low temperature FinFET process,Solid Phase Epitaxy Regrowth,gate last integration,LT devices,HT POR,SPER doping,innovative Double SPER process,DSPER process,high-performance LT FinFETs,3D sequential integration,High Temperature Process of Reference,amorphization/recrystallization steps
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