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(Invited) GaN-Based Multiple 2DEG Channel BRIDGE (buried Dual Gate) HEMT Technology for High Power and Linearity

Keisuke Shinohara,Casey King,Eric Regan, M P Gomez,Joshua Bergman,Andrew Carter,Andrea Arias,Miguel Urteaga,Berinder Brar,Ryan Page,Reet Chaudhuri, Moudud Islam,Huili Grace Xing,Debdeep Jena

Meeting abstracts/Meeting abstracts (Electrochemical Society CD-ROM)（2019）

Cited 4|Views23
Key words
AlGaN/GaN HEMTs,GaN
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