First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3-D Integration with Dual Work Function Gate for Ultralow-Power SRAM and RF Applications
IEEE Transactions on Electron Devices（2022）
关键词
Logic gates,Transistors,Inverters,Radio frequency,Threshold voltage,Surface treatment,Tin,Complementary field-effect-transistor (CFET),heterogeneous integration,hybrid complementary metal-oxide-semiconductor (Hybrid CMOS),indium gallium zinc oxide (IGZO) Radio Frequency Integrated Circuit (RFIC),oxide semiconductor (OS),static random access memory (SRAM),vertically stacked
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