Improvement of Twisting and Line-Edge Roughness of 3D NAND Deep Trench Etching on Yield Enhancement
2022 33rd Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)（2022）
关键词
yield enhancement,advanced equipment processes,structural bending,deep slit trench patterns,3D NAND development,drawback results,circuit suffering,missed VIA connections,common source line,unexpectedly high leakage,device operation,physical failure analyses,slit profile,plasma etching,worse line-edge roughness,12 μm-deep trench,asymmetrical incident ions trajectory angle,etch recipe optimization,slit trench profile,leakage current,3D NAND deep trench etching,current 1.0 nA
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