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New Insights of the Switching Process in GeAsTe Ovonic Threshold Switching (OTS) Selectors

Zeyu Hu,Weidong Zhang,Robin Degraeve,Daniele Garbin,Zheng Chai,Nishant Saxena,Pedro Freitas,Andrea Fantini,Taras Ravsher,Sergiu Clima,Jian Fu Zhang,Romain Delhougne,Ludovic Goux,Gouri Kar

IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）

引用 2|浏览54
关键词
1S1R,defects,emerging memory,mechanism,ovonic threshold switching (OTS),selector
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