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    • Defectivity Reduction in EUV Resists Through Novel High-Performance Point-Of-Use (POU) Filters

    Yiren Zhang,Toru Umeda, Hirokazu Sakakibara, Sheik Ansar Usman Ibrahim, Atsushi Sakamoto,Amarnauth Singh,Robert Shick,Karl Skjonnemand,Philippe Foubert,Waut Drent

    ADVANCES IN PATTERNING MATERIALS AND PROCESSES XL（2023）

    Pall Corp | Nihon Pall Ltd | imec

    Cited 0|Views0
    Abstract
    Filters for Extreme Ultra-Violet (EUV) lithography chemicals, like chemically amplified photoresist (CAR), are attractive because of their capabilities to remove aggregated species and reduce microbridges in high volume manufacturing. Unlike bulk filters used in high-flow circulation mode, point-of-use (POU) filter is used in single-pass mode, so the retention performance and cleanliness become the most critical factors. Earlier presentations have demonstrated the benefit of reducing on-wafer defectivities through filtration of EUV photoresists with the state-of-the-art HDPE membranes filters, Pall (R) sub-1nm HDPE (XPR3L). In this study, we present a novel HDPE filter specifically designed to provide high retention performance, which is mainly enabled by an improvement in retention characteristics of membrane and cleanliness in finished POU filters. The membrane was designed to have a finer pore size and better pore geometry to improve defect retention. To expedite the filter start-up process, optimized device cleaning process was applied to further improve initial cleanliness, which was indicated by GC-MS, LC-MS/MS and ICP-MS measurements, etc. Finally, the POU filters were evaluated at imec EUV cluster consisting of TEL CleanTrack T LITHIUS Pro T-Z and ASML NXE:3400B, and comparative defect data was obtained from patterned wafers with 16nm L/S.
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    Key words
    EUV Lithography,microbridges,bulk filtration,POU filtration
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    【要点】：本研究提出了一种新型高性能的点用（POU）过滤器，用于减少极紫外（EUV）光阻中的缺陷性，创新点在于改进了过滤膜的保留特性和过滤器的清洁度。
    

    【方法】：通过设计更细的孔隙大小和更优的孔隙几何形状的HDPE膜，以及优化设备的清洁流程，以提升缺陷保留性能和初始清洁度。
    

    【实验】：在imec EUV集群中使用TEL CleanTrack T LITHIUS Pro T-Z和ASML NXE:3400B设备评估了POU过滤器，通过16nm L/S图案化晶圆获得了比较性的缺陷数据。