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Computational Model for Predicting Structural Stability and Stress Transfer of a New SiGe Stressor Technique for NMOS Devices

Thomas Bordignon,Blandine Duriez,Nicolas Guitard,Romain Duru,Clement Pribat,Jerome Richy,Shay Reboh,Siddhartha Dhar,Frederic Monsieur,Thibaud Fache,Zdenek Chalupa,Jean-Michel Hartmann,Pascal Chevalier,Yannick Roelens,Francois Danneville,Sebastien Cremer

Solid-State Electronics（2023）

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关键词
RF CMOS,PDSOI,Tensile strain,Tensile stress,SiGe,Ge diffusion,TCAD
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