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Dislocation-mediated Migration of the Α/β Interfaces in Titanium

ACTA MATERIALIA(2023)

Tsinghua Univ | Nucl Power Inst China | RMIT Univ | Artificial Intelligence Sci Inst | Chinese Acad Sci

Cited 15|Views47
Abstract
Interphase boundaries are essential in the deformation and phase transformations in titanium (Ti) alloys. While static structures of semicoherent α/β interfaces in various Ti alloys have been carefully examined, their migration behavior at atomic scales is far less clear. In this study, we employed molecular dynamics simulations to investigate the migration of the semicoherent α/β interface in pure Ti. The interface migration behavior shows a shear-coupled feature with the interface dislocation glide and a macroscopic shear. The simulation reveals that both the glide direction of the dislocations with respect to the interface and the dislocation spacing strongly influence the migration rate, and the low-index glide plane of the interface dislocation plays a minor role. The dependence of interface mobility on temperatures confirms the critical role of thermal activation during the interface migration, especially for activating the interface dislocation glide. Furthermore, the shear-coupled interface migration driven by element partition is simulated using a newly developed Ti-Mo potential, consistent with the displacive-diffusional features previously observed in the surface precipitates. The simulated interface migration mode is validated by comparing it with the crystallography features of surface precipitates in a Ti-Cr alloy. The interface energy and mobility obtained from simulations further explain why the distinctive crystallographic features of the surface precipitates observed experimentally are favored over other candidate interfaces. The present study has explored an approach for systematically examining thermodynamic and kinetic factors governing the development of phase transformation crystallography at different temperatures and chemical driving forces.
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Interface migration,Molecular dynamics,Titanium,Dislocation glide,Surface precipitate
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要点】:本研究使用分子动力学模拟探讨了纯钛中半共晶α/β界面的迁移行为,发现界面迁移具有剪切耦合特征,受到界面位错滑移和宏观剪切的影响,界面迁移率对温度依赖性证实了热激活在界面迁移过程中的关键作用,尤其对于激活界面位错的滑移。

方法】:采用分子动力学模拟方法。

实验】:通过新开发的钛-钼潜在能量模型模拟元素分布驱动的剪切耦合界面迁移,与钛-铬合金表面沉淀物的晶体学特征进行了比较验证。