GaAs-Based Wide-Aperture Single Emitters with 68 W Output Power at 69% Efficiency Realized Using a Periodic Buried-Regrown-Implant-Structure
2023 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)（2023）
Key words
4-terminal configuration,AuSn/bin,conversion efficiency,current flow,CuW/bin,electro-optic characteristics,emitting aperture,frequency 10.0 Hz,front facet reflectivity,GaAs/bin,gallium arsenide-based wide-aperture single emitters,goniometer,high power photonic crystal surface emitting lasers,highly-doped p-type material,in-pulse-power,lateral current path,lateral refractive index steps,low-loss coupling,metal organic vapor phase epitaxy,optical output power,p-n junctions,p-side cladding,periodic buried-regrown-implant-structure,photodetector,power 200.0 W,power 30.0 W,power 45.0 W,power 50.0 W,power 68.0 W,quasicontinuous wave QCW test,rear facet reflectivity,residual thickness,resonator configurations,resonator length,ring oscillations,single broad area gallium arsenide-based diode lasers,size 4.0 mm,temperature 25 degC,thermal resistance,thermoelectric detector,time 500.0 mus,waveguide layers,wavelength 915.0 nm,ZnSe/bin,ηE-optimized highly vertically asymmetric epitaxial design
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