Fabrication of CFETs with Vertically Stacked P-Sige/n-si Channels by SiGe/Ge/Si Multilayer Epitaxy and Ge Selective Etching
ACS Applied Electronic Materials（2024）
关键词
Nanosheet FET,complementary FET (CFET),straightforwardS/D implantation,SiGe/Ge/Si multilayer structure,multilayer epitaxy,selective etching
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要