Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN P-I-n Diodes with Avalanche Capability

James Spencer Lundh,Alan G. Jacobs,Prakash Pandey,Tolen Nelson,Daniel G. Georgiev,Andrew D. Koehler,Raghav Khanna,Marko J. Tadjer,Karl D. Hobart,Travis J. Anderson

IEEE Electron Device Letters（2024）

引用 0|浏览33

关键词

P-i-n diodes,Implants,Gallium nitride,ISO,Temperature measurement,Periodic structures,Electric fields,Gallium nitride (GaN),vertical diodes,breakdown,edge termination,impact ionization,parallel-plane,avalanche,electroluminescence,TCAD

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