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Giant Second‐Order Nonlinearity and Anisotropy of Large‐Sized Few‐Layer SnS with Ferroelectric Stacking

Advanced Optical Materials(2024)SCI 2区

Natl Taiwan Univ | Univ Tokyo | Acad Sinica | Tamkang Univ

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Abstract
The giant second-order nonlinearity of SnS with ferroelectric stacking is reported. Based on theoretical calculations, the susceptibility of second harmonic generation (SHG) from SnS with ferroelectric stacking is up to 1354 pm V-1, which is three orders of magnitude higher than the values of traditional nonlinear crystals such as BBO and KTP. The SHG from ferroelectric SnS few layers is experimentally measured and its intensity is found to be 131 times larger than that of a MoS2 monolayer under the same experimental conditions, with a photon energy of 1.55 eV. The SHG susceptibility is determined to be on the order of 100 pm V-1. Numerous SnS flakes are systematically investigated using polarization-resolved SHG. Micrometer-sized flakes with a single domain are found, and their SHG anisotropic patterns fit well with the theoretical calculations derived from first-principles methods. The variation in SHG anisotropic patterns, attributed to SHG interference from multiple domains, is investigated both theoretically and experimentally. Additionally, the impact of stacking disorder on the SHG anisotropic pattern is explored. It is demonstrated that polarization-resolved SHG microscopy is a valuable tool for identifying domains in SnS flakes and examining stacking disorder. Giant second-order nonlinearity of SnS with ferroelectric stacking is reported. Its second harmonic generation (SHG) susceptibility, on the order of 1000 pm V-1, is three orders of magnitude higher than the values of traditional nonlinear crystals such as BBO and KTP. The SHG anisotropy of single-domain and multi-domain SnS flakes is systematically investigated. image
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Key words
anisotropic patterns of second harmonic generation,ferroelectric stacking,micron-sized flakes of SnS
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要点】:研究报道了具有铁电堆叠结构的大尺寸SnS少层材料的巨大二阶非线性,其SHG susceptibility比传统非线性晶体高出三个数量级,并探究了SHG各向异性。

方法】:通过理论计算和实验测量,结合第一原理方法进行SHG各向异性分析。

实验】:在相同实验条件下,测量了SnS少层材料的SHG强度,发现其比MoS2单层材料大131倍,确定SHG susceptibility约为100 pm V^-1。使用偏振分辨SHG对大量SnS薄片进行系统研究,发现微米级单域薄片,并验证了SHG各向异性模式与理论计算结果的一致性。同时,探讨了SHG各向异性模式的变化与多域干涉以及堆叠无序的影响。实验使用了未知数据集。