Experimental Comparative Demonstrations and Analysis of 3.3kv 4H-Sic Common-Drain and Common-Source Bidirectional Charge-Balanced Power DMOSFETs Switching

Z. He,M. Torky,R. Ghandi, C. W. Hitchcock, S. Kennerly,T. P. Chow

2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024（2024）

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4H-SiC,high voltage power DMOSFET,Bidirectional,Charge-balanced

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