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Effect of the AlGaN Multi‐Quantum Well Growth Temperature on the Efficiency of Metal‐Organic Vapor‐Phase Epitaxy‐Grown Far‐Ultraviolet‐C Light‐Emitting Diodes Emitting Near 235 Nm

Marcel Schilling,Norman Susilo,Anton Muhin,Giulia Cardinali,Jan Ruschel,Hyun Kyong Cho,Jens Rass,Jakob Hoepfner,Tim Wernicke,Sven Einfeldt,Michael Kneissl

physica status solidi (a)（2024）

Cited 2|Views3
Key words
AlGaN,external quantum efficiency,light-emitting-diodes,metal-organic vapor-phase epitaxy
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