Single-Event Transients in Vertical GaN Diodes with N-Implanted Hybrid Edge Termination

Andrew D. Koehler,Ani Khachatrian,Alan G. Jacobs,James Spencer Lundh,Adrian Ildefonso,Cory D. Cress,Geoffrey M. Foster,Tolen Nelson,Daniel Georgiev,Raghav Khanna,Karl D. Hobart,Travis J. Anderson

IEEE Transactions on Nuclear Science（2025）

Cited 0|Views6

Key words

gallium nitride (GaN),vertical power diode,single event effect (SEE),single event transient (SET),two-photon absorption (TPA),pulsed laser single event effects (PL SEE)

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