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Effect of P-Ingan Cap Layer on Low-Resistance Contact to P-Gan: Carrier Transport Mechanism and Barrier Height Characteristics

Mohit Kumar, Laurent Xu, Timothee Labau,Jerome Biscarrat,Simona Torrengo,Matthew Charles,Christophe Lecouvey,Aurelien Olivier, Joelle Zgheib,Rene Escoffier,Julien Buckley

CRYSTALS（2025）

Cited 0|Views2
Key words
p(++)-InGaN,contact resistivity,Schottky barrier height,polarization effects,carrier transport mechanism,GaN-based heterostructures
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