Stephen M Ramey

Stephen Ramey received the B.S. degree in physics from Carnegie Mellon University, Pittsburgh, PA, USA, the M.S.E.E. degree from the University of Nevada at Las Vegas, Las Vegas, NV, USA, and the Ph.D. degree in electrical engineering from Arizona State University, Tempe, AZ, USA, with a focus on device simulators to include quantum mechanical effects into MOSFETs. He developed a device simulator to include quantum wells into photovoltaic devices at the University of Nevada at Las Vegas. He has been with Solid State Measurements, Inc., developing new spreading resistance and CV metrology systems and published multiple articles on various aspects of the measurement technology. Since 2003, he has been with the Logic Technology Development Transistor Reliability Group, Intel, which he now manages. He has helped develop Intel’s logic process technologies from the 90-nm through 7-nm technology nodes. Some notable achievements include guiding the development of the world’s first commercial high-k gate process technology (Intel’s 45 nm) with a focus on developing first-of-kind models to predict aging and the impact of dielectric breakdown in CPU products. He was the Lead Transistor Reliability Engineer responsible for guiding the development of the world’s first commercial FinFET technology (Intel’s 22-nm node). In that capacity, he discovered and mitigated multiple new reliability issues associated with the FinFET architecture. His primary contributions to the success of these technologies have been optimizing process flows and device architectures to meet reliability requirements, as well as developing novel predictive reliability modeling capabilities to treat the new physics that emerge with each new technology node. He has authored more than 50 publications spanning the range from semiconductor measurement techniques, photovoltaic devices, device simulation, transistor reliability, and semiconductor process development. He has delivered tutorials and short courses at the IEEE International Reliability Physics Symposium (IEEE IRPS), IEDM, and IIRW. He has multiple U.S. patents granted and in progress. Dr. Ramey won the Best Article Award at the International Reliability Physics Symposium in 2013. He has chaired technical committees at IRPS, IEDM, and IIRW and serves on the Reliability Committee of the Electron Device Society.